DIODES DXT5551P5-13
Manufacturer No:
DXT5551P5-13
Manufacturer:
DIODES
Package:
PowerDI? 5
Description:
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN PowerDI? 5 Tape & Reel (TR) Surface Mount
Quantity:
In Stock :4558
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Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DXT5551P5-13 Information
DIODES DXT5551P5-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DXT5551P5-13.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- PowerDI? 5
- Number of Pins
- 5
- Weight
- 95.991485mg
- Transistor Element Material
- SILICON
- Manufacturer Package Identifier
- POWERDI-5
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Type
- Parameter
- Published
- 2016
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- Other Transistors
Download datasheets and manufacturer documentation for DIODES DXT5551P5-13.
Environmental Information:
DXT5551P5-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 600mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 160V volts.When collector current reaches its maximum, it can reach 600mA volts.
DXT5551P5-13 Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
DXT5551P5-13 Applications
There are a lot of Diodes Incorporated
DXT5551P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
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