Diodes DXT13003DG-13
Diodes DXT13003DG-13

Diodes DXT13003DG-13

Manufacturer No:

DXT13003DG-13

Manufacturer:

Diodes

Package:

TO-261-4, TO-261AA

Description:

NPN -55°C~150°C TJ 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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DXT13003DG-13 information

Diodes DXT13003DG-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes DXT13003DG-13.

  • Type
  • Parameter
  • Factory Lead Time
  • 15 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Weight
  • 7.994566mg
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2014
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn)
  • Max Power Dissipation
  • 700mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • JESD-30 Code
  • R-PDSO-G4
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Case Connection
  • COLLECTOR
  • Gain Bandwidth Product
  • 4MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 400mV
  • Max Collector Current
  • 1.3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 16 @ 500mA 2V
  • Vce Saturation (Max) @ Ib, Ic
  • 400mV @ 250mA, 1A
  • Collector Emitter Breakdown Voltage
  • 450V
  • Transition Frequency
  • 4MHz
  • Collector Emitter Saturation Voltage
  • 400mV
  • Max Breakdown Voltage
  • 450V
  • Emitter Base Voltage (VEBO)
  • 9V
  • Continuous Collector Current
  • 1.3A
  • Turn On Time-Max (ton)
  • 3700ns
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Diodes DXT13003DG-13.

Datasheets:

Environmental Information:

DXT13003DG-13 Overview


The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 16 @ 500mA 2V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 250mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.3A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.A transition frequency of 4MHz is present in the part.There is a breakdown input voltage of 450V volts that it can take.Collector current can be as low as 1.3A volts at its maximum.

DXT13003DG-13 Features


the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


DXT13003DG-13 Applications


There are a lot of Diodes Incorporated
DXT13003DG-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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