DIODES DN0150BLP4-7
Manufacturer No:
DN0150BLP4-7
Manufacturer:
DIODES
Package:
3-XFDFN
Description:
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
Quantity:
In Stock :5912
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DN0150BLP4-7 Information
DIODES DN0150BLP4-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DN0150BLP4-7.
- Type
- Parameter
- Factory Lead Time
- 14 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- JESD-609 Code
- e4
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- Other Transistors
- Max Power Dissipation
- 450mW
- Terminal Position
- BOTTOM
Download datasheets and manufacturer documentation for DIODES DN0150BLP4-7.
Datasheets:
Environmental Information:
DN0150BLP4-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 60MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
DN0150BLP4-7 Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
DN0150BLP4-7 Applications
There are a lot of Diodes Incorporated
DN0150BLP4-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
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