DIODES DMTH6010LK3-13
Manufacturer No:
DMTH6010LK3-13
Manufacturer:
DIODES
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m ? @ 20A, 10V ±20V 2090pF @ 30V 41.3nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :1671
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 16 - Wed, Jun 17, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMTH6010LK3-13 Information
DIODES DMTH6010LK3-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH6010LK3-13.
- Type
- Parameter
- Factory Lead Time
- 23 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- JESD-609 Code
- e3
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for DIODES DMTH6010LK3-13.
Environmental Information:
PCN Assembly/Origin:
DMTH6010LK3-13 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 20 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2090pF @ 30V.This device conducts a continuous drain current (ID) of 70A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 14.8A.Pulsed drain current is maximum rated peak drain current 130A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMTH6010LK3-13 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 70A
based on its rated peak drain current 130A.
a 60V drain to source voltage (Vdss)
DMTH6010LK3-13 Applications
There are a lot of Diodes Incorporated
DMTH6010LK3-13 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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