DIODES DMP2008UFG-7

Manufacturer No:

DMP2008UFG-7

Manufacturer:

DIODES

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 8m ? @ 12A, 4.5V ±8V 6909pF @ 10V 72nC @ 4.5V 20V 8-PowerVDFN

Quantity:

Delivery:

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In Stock :Available

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DMP2008UFG-7 information

DIODES DMP2008UFG-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMP2008UFG-7.

Type
Parameter

Factory Lead Time
19 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
8-PowerVDFN

Number of Pins
8

Weight
72.007789mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2014

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
NO LEAD

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
40

JESD-30 Code
S-PDSO-N5

Number of Channels
1

Power Dissipation-Max
2.4W Ta 41W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
22 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
8m ? @ 12A, 4.5V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
6909pF @ 10V

Current - Continuous Drain (Id) @ 25°C
14A Ta 54A Tc

Gate Charge (Qg) (Max) @ Vgs
72nC @ 4.5V

Rise Time
33ns

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V

Vgs (Max)
±8V

Fall Time (Typ)
124 ns

Turn-Off Delay Time
291 ns

Continuous Drain Current (ID)
54A

Gate to Source Voltage (Vgs)
8V

Drain to Source Breakdown Voltage
-20V

Height
850?m

Download datasheets and manufacturer documentation for DIODES DMP2008UFG-7.

Datasheets:

diodesincorporated-dmp2008ufg7-datasheets-7416.pdf

Environmental Information:

diodesincorporated-desd5v0s1ba7-environmentalinformation-9032.pdf

DMP2008UFG-7 Overview

A device's maximal input capacitance is 6909pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 54A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 291 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).

DMP2008UFG-7 Features

a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 291 ns
a 20V drain to source voltage (Vdss)

DMP2008UFG-7 Applications

There are a lot of Diodes Incorporated
DMP2008UFG-7 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

User Guide

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DELIVERY TIME

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