DIODES DMNH6008SCTQ
Manufacturer No:
DMNH6008SCTQ
Manufacturer:
DIODES
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 8m ? @ 20A, 10V 20V 2596pF @ 30V 21nC @ 10V 60V TO-220-3
Quantity:
In Stock :3892
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMNH6008SCTQ Information
DIODES DMNH6008SCTQ technical specifications, attributes, parameters and parts with similar specifications to DIODES DMNH6008SCTQ.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- Automotive, AEC-Q101
- Published
- 2016
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for DIODES DMNH6008SCTQ.
Datasheets:
Environmental Information:
DMNH6008SCTQ Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 190 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2596pF @ 30V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 200A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
DMNH6008SCTQ Features
the avalanche energy rating (Eas) is 190 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 200A.
a 60V drain to source voltage (Vdss)
DMNH6008SCTQ Applications
There are a lot of Diodes Incorporated
DMNH6008SCTQ applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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