DIODES DMN65D7LFR4-7

Manufacturer No:

DMN65D7LFR4-7

Manufacturer:

DIODES

Package:

4-XDFN Exposed Pad

Description:

MOSFET (Metal Oxide) N-Channel 5Ohm @ 40mA, 10V ±20V 41 pF @ 30 V 1.04 nC @ 10 V 60 V 4-XDFN Exposed Pad

Quantity:

In Stock :6212

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Shipped from：HK Warehouse

Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMN65D7LFR4-7 Information

DIODES DMN65D7LFR4-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN65D7LFR4-7.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
4-XDFN Exposed Pad

Supplier Device Package
X2-DFN1010-4 (Type B)

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
600mW (Ta)

Base Product Number
DMN65

Operating Temperature
-55°C ~ 150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
5Ohm @ 40mA, 10V

Vgs(th) (Max) @ Id
2.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
41 pF @ 30 V

Current - Continuous Drain (Id) @ 25°C
260mA (Ta)

Gate Charge (Qg) (Max) @ Vgs
1.04 nC @ 10 V

Drain to Source Voltage (Vdss)
60 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMN65D7LFR4-7.

DMN65D7LFR4-7 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 41 pF @ 30 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60 V.