

DIODES DMN62D0LFB-7
Manufacturer No:
DMN62D0LFB-7
Manufacturer:
Package:
3-UFDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2 ? @ 100mA, 4V ±20V 32pF @ 25V 0.45nC @ 4.5V 60V 3-UFDFN
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DMN62D0LFB-7 information
DIODES DMN62D0LFB-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN62D0LFB-7.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Contact Plating
- Gold
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-UFDFN
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e4
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- Pin Count
- 3
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 470mW Ta
- Element Configuration
- Single
- Power Dissipation
- 470mW
- Case Connection
- DRAIN
- Turn On Delay Time
- 3.4 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 2 ? @ 100mA, 4V
- Vgs(th) (Max) @ Id
- 1V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 32pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 100mA Ta
- Gate Charge (Qg) (Max) @ Vgs
- 0.45nC @ 4.5V
- Rise Time
- 3.4ns
- Drain to Source Voltage (Vdss)
- 60V
- Drive Voltage (Max Rds On,Min Rds On)
- 1.5V 4V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 16.3 ns
- Turn-Off Delay Time
- 26.4 ns
- Continuous Drain Current (ID)
- 100mA
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 2Ohm
- DS Breakdown Voltage-Min
- 60V
- Feedback Cap-Max (Crss)
- 6 pF
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for DIODES DMN62D0LFB-7.
Environmental Information:
DMN62D0LFB-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 32pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 26.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4V).
DMN62D0LFB-7 Features
a continuous drain current (ID) of 100mA
the turn-off delay time is 26.4 ns
a 60V drain to source voltage (Vdss)
DMN62D0LFB-7 Applications
There are a lot of Diodes Incorporated
DMN62D0LFB-7 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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