

DIODES DMN5L06WK-7
Manufacturer No:
DMN5L06WK-7
Manufacturer:
Package:
SC-70, SOT-323
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2 ? @ 50mA, 5V ±20V 50pF @ 25V SC-70, SOT-323
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DMN5L06WK-7 information
DIODES DMN5L06WK-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN5L06WK-7.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Weight
- 6.010099mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -65°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 2Ohm
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- HIGH RELIABILITY, FAST SWITCHING
- Subcategory
- FET General Purpose Powers
- Voltage - Rated DC
- 50V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Current Rating
- 280mA
- Time@Peak Reflow Temperature-Max (s)
- 40
- Pin Count
- 3
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 250mW Ta
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 250mW
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 2 ? @ 50mA, 5V
- Vgs(th) (Max) @ Id
- 1V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 300mA Ta
- Drive Voltage (Max Rds On,Min Rds On)
- 1.8V 5V
- Vgs (Max)
- ±20V
- Continuous Drain Current (ID)
- 300mA
- Threshold Voltage
- 1V
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Breakdown Voltage
- 50V
- Feedback Cap-Max (Crss)
- 5 pF
- Height
- 1mm
Download datasheets and manufacturer documentation for DIODES DMN5L06WK-7.
Environmental Information:
DMN5L06WK-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 50V and VGS=50V, so the drain-source breakdown voltage is 50V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 5V).
DMN5L06WK-7 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 50V voltage
a threshold voltage of 1V
DMN5L06WK-7 Applications
There are a lot of Diodes Incorporated
DMN5L06WK-7 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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