DIODES DMN55D0UT-7
Manufacturer No:
DMN55D0UT-7
Manufacturer:
DIODES
Package:
SOT-523
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4 ? @ 100mA, 4V ±12V 25pF @ 10V SOT-523
Quantity:
In Stock :8258
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMN55D0UT-7 Information
DIODES DMN55D0UT-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN55D0UT-7.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-523
- Number of Pins
- 3
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2012
- Type
- Parameter
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- HIGH RELIABILITY
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
Download datasheets and manufacturer documentation for DIODES DMN55D0UT-7.
Environmental Information:
PCN Design/Specification:
DMN55D0UT-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 25pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 160mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.800mV is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (2.5V 4V) reduces this device's overall power consumption.
DMN55D0UT-7 Features
a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of 50V voltage
a threshold voltage of 800mV
DMN55D0UT-7 Applications
There are a lot of Diodes Incorporated
DMN55D0UT-7 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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