DIODES DMN10H099SFG-7
Manufacturer No:
DMN10H099SFG-7
Manufacturer:
DIODES
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 80m ? @ 3.3A, 10V ±20V 1172pF @ 50V 25.2nC @ 10V 8-PowerVDFN
Quantity:
In Stock :9823
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMN10H099SFG-7 Information
DIODES DMN10H099SFG-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN10H099SFG-7.
- Type
- Parameter
- Factory Lead Time
- 23 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Weight
- 72.007789mg
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2014
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Capacitance
- 1.127nF
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Power Dissipation-Max
- 980mW Ta
- Turn On Delay Time
- 5.4 ns
- FET Type
- N-Channel
Download datasheets and manufacturer documentation for DIODES DMN10H099SFG-7.
Environmental Information:
DMN10H099SFG-7 Overview
A device's maximum input capacitance is 1172pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
DMN10H099SFG-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
DMN10H099SFG-7 Applications
There are a lot of Diodes Incorporated
DMN10H099SFG-7 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
