DIODES DMJ70H1D4SV3
Manufacturer No:
DMJ70H1D4SV3
Manufacturer:
DIODES
Package:
TO-251-3 Stub Leads, IPak
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.5 ? @ 1A, 10V ±30V 342pF @ 50V 7.5nC @ 10V 700V TO-251-3 Stub Leads, IPak
Quantity:
In Stock :6535
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMJ70H1D4SV3 Information
DIODES DMJ70H1D4SV3 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMJ70H1D4SV3.
- Type
- Parameter
- Factory Lead Time
- 9 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Stub Leads, IPak
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Type
- Parameter
- Number of Terminations
- 3
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSIP-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for DIODES DMJ70H1D4SV3.
DMJ70H1D4SV3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 7.5 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 342pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 700V in order to maintain normal operation.Operating this transistor requires a 700V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
DMJ70H1D4SV3 Features
the avalanche energy rating (Eas) is 7.5 mJ
based on its rated peak drain current 6A.
a 700V drain to source voltage (Vdss)
DMJ70H1D4SV3 Applications
There are a lot of Diodes Incorporated
DMJ70H1D4SV3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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