Diodes ZXMN2B01FTA

Manufacturer No:

ZXMN2B01FTA

Manufacturer:

Diodes

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 100m ? @ 2.4A, 4.5V ±8V 370pF @ 10V 4.8nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

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In Stock :Available

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ZXMN2B01FTA information

Diodes ZXMN2B01FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes ZXMN2B01FTA.

Type
Parameter

Factory Lead Time
17 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Weight
7.994566mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Resistance
100mOhm

Terminal Finish
Matte Tin (Sn)

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
40

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
625mW Ta

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
806mW

Turn On Delay Time
2.2 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
100m ? @ 2.4A, 4.5V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
370pF @ 10V

Current - Continuous Drain (Id) @ 25°C
2.1A Ta

Gate Charge (Qg) (Max) @ Vgs
4.8nC @ 4.5V

Rise Time
3.6ns

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V

Vgs (Max)
±8V

Fall Time (Typ)
3.6 ns

Turn-Off Delay Time
17.8 ns

Continuous Drain Current (ID)
2.4A

Gate to Source Voltage (Vgs)
8V

DS Breakdown Voltage-Min
20V

Download datasheets and manufacturer documentation for Diodes ZXMN2B01FTA.

Datasheets:

diodesincorporated-zxmn2b01fta-datasheets-5769.pdf

Environmental Information:

diodesincorporated-desd5v0s1ba7-environmentalinformation-9032.pdf

ZXMN2B01FTA Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 370pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.4A amps.It is [17.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 2.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

ZXMN2B01FTA Features

a continuous drain current (ID) of 2.4A
the turn-off delay time is 17.8 ns
a 20V drain to source voltage (Vdss)

ZXMN2B01FTA Applications

There are a lot of Diodes Incorporated
ZXMN2B01FTA applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

User Guide

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