Harris D72FY4D1

Manufacturer No:

D72FY4D1

Manufacturer:

Harris

Package:

TO-251-3 Short Leads, IPak, TO-251AA

Description:

NPN - Darlington -55°C ~ 150°C (TJ) 20?A (ICBO) TO-251-3 Short Leads, IPak, TO-251AA Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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D72FY4D1 information

Harris D72FY4D1 technical specifications, attributes, parameters and parts with similar specifications to Harris D72FY4D1.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package
I-PAK

Mfr
Harris Corporation

Package
Bulk

Product Status
Active

Operating Temperature
-55°C ~ 150°C (TJ)

Power - Max
1 W

Transistor Type
NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A, 2V

Current - Collector Cutoff (Max)
20?A (ICBO)

Vce Saturation (Max) @ Ib, Ic
1.5V @ 6mA, 3A

Voltage - Collector Emitter Breakdown (Max)
80 V

Current - Collector (Ic) (Max)
4 A

Download datasheets and manufacturer documentation for Harris D72FY4D1.

D72FY4D1 Overview

The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 2000 @ 1A, 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 6mA, 3A.The product comes in the supplier device package of I-PAK.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.

D72FY4D1 Features

the DC current gain for this device is 2000 @ 1A, 2V
the vce saturation(Max) is 1.5V @ 6mA, 3A
the supplier device package of I-PAK

D72FY4D1 Applications

There are a lot of Harris Corporation
D72FY4D1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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