Harris BD751C
Manufacturer No:
BD751C
Manufacturer:
Harris
Package:
TO-204
Description:
NPN 200°C (TJ) 500?A TO-204 Through Hole
Quantity:
In Stock :5785
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Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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BD751C Information
Harris BD751C technical specifications, attributes, parameters and parts with similar specifications to Harris BD751C.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-204
- Supplier Device Package
- TO-3
- Mfr
- Harris Corporation
- Package
- Bulk
- Product Status
- Active
- Operating Temperature
- 200°C (TJ)
- Power - Max
- 250 W
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 25 @ 5A, 2V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 500?A
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 500mA, 5A
- Voltage - Collector Emitter Breakdown (Max)
- 130 V
- Current - Collector (Ic) (Max)
- 20 A
Download datasheets and manufacturer documentation for Harris BD751C.
BD751C Overview
In this device, the DC current gain is 25 @ 5A, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500mA, 5A.Supplier device package TO-3 comes with the product.The device exhibits a collector-emitter breakdown at 130 V.
BD751C Features
the DC current gain for this device is 25 @ 5A, 2V
the vce saturation(Max) is 1V @ 500mA, 5A
the supplier device package of TO-3
BD751C Applications
There are a lot of Harris Corporation
BD751C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
