ONSEMI BUL45D2G
Manufacturer No:
BUL45D2G
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
NPN Bipolar Power Transistor
Quantity:
In Stock :5943
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
BUL45D2G Information
ONSEMI BUL45D2G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BUL45D2G.
- Type
- Parameter
- VBE(sat) (V)
- 0.8
- VBE(on) (V)
- -
- hFE Min
- 22
- fT Min (MHz)
- -
- MSL Temp (°C)
- 0
- VCE(sat) Max (V)
- 0.8
- VEBO (V)
- 12
- PTM Max (W)
- 75
- Package Type
- TO-220-3
- Container Qty.
- 50
- Type
- Parameter
- hFE Max
- -
- Case Outline
- 221A
- VCEO Min (V)
- 400
- Type
- General Purpose
- IC Cont. (A)
- 5
- VCBO (V)
- 700
- MSL Type
- NA
- Container Type
- TUBE
- Polarity
- NPN
Download datasheets and manufacturer documentation for ONSEMI BUL45D2G.
Datasheet:
Package Drawing:
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Feature
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees
Due to the H2BIP Structure which Minimizes the Spread - Integrated Collector-Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCE(sat)
- "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
- Pb-Free Package is Available
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)