NXP BUK98150-55,135
NXP BUK98150-55,135

NXP BUK98150-55,135

Manufacturer No:

BUK98150-55,135

Manufacturer:

NXP

Package:

TO-261-4, TO-261AA

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 150m ? @ 5A, 5V ±10V 330pF @ 25V 55V TO-261-4, TO-261AA

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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BUK98150-55,135 information

NXP BUK98150-55,135 technical specifications, attributes, parameters and parts with similar specifications to NXP BUK98150-55,135.

  • Type
  • Parameter
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Surface Mount
  • YES
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • TrenchMOS?
  • Published
  • 1998
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • Additional Feature
  • LOGIC LEVEL COMPATIBLE, ESD PROTECTED
  • HTS Code
  • 8541.29.00.75
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • JESD-30 Code
  • R-PDSO-G4
  • Number of Elements
  • 1
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
  • 8.3W Tc
  • Operating Mode
  • ENHANCEMENT MODE
  • Case Connection
  • DRAIN
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 150m ? @ 5A, 5V
  • Vgs(th) (Max) @ Id
  • 2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
  • 330pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
  • 5.5A Tc
  • Drain to Source Voltage (Vdss)
  • 55V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 5V
  • Vgs (Max)
  • ±10V
  • Drain Current-Max (Abs) (ID)
  • 2.6A
  • Drain-source On Resistance-Max
  • 0.15Ohm
  • Pulsed Drain Current-Max (IDM)
  • 30A
  • DS Breakdown Voltage-Min
  • 55V
  • Avalanche Energy Rating (Eas)
  • 15 mJ
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for NXP BUK98150-55,135.

Datasheets:

PCN Packaging:

BUK98150-55,135 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 15 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 330pF @ 25V.2.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 30A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 55V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (5V) reduces this device's overall power consumption.

BUK98150-55,135 Features


the avalanche energy rating (Eas) is 15 mJ
based on its rated peak drain current 30A.
a 55V drain to source voltage (Vdss)


BUK98150-55,135 Applications


There are a lot of NXP USA Inc.
BUK98150-55,135 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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