

NEXPERIA BUK7608-40B,118
Manufacturer No:
BUK7608-40B,118
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m ? @ 25A, 10V ±20V 2689pF @ 25V 36nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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BUK7608-40B,118 information
NEXPERIA BUK7608-40B,118 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK7608-40B,118.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchMOS?
- Published
- 2008
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
- Time@Peak Reflow Temperature-Max (s)
- 30
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Power Dissipation-Max
- 157W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 157W
- Case Connection
- DRAIN
- Turn On Delay Time
- 20 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 8m ? @ 25A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 2689pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 75A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Rise Time
- 51ns
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 33 ns
- Turn-Off Delay Time
- 51 ns
- Continuous Drain Current (ID)
- 101A
- Gate to Source Voltage (Vgs)
- 20V
- Max Dual Supply Voltage
- 40V
- Drain-source On Resistance-Max
- 0.008Ohm
- Drain to Source Breakdown Voltage
- 40V
- Pulsed Drain Current-Max (IDM)
- 407A
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for NEXPERIA BUK7608-40B,118.
Datasheets:
PCN Packaging:
RohsStatement:
BUK7608-40B,118 Overview
A device's maximum input capacitance is 2689pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 101A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 51 ns.Its maximum pulsed drain current is 407A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK7608-40B,118 Features
a continuous drain current (ID) of 101A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 407A.
BUK7608-40B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7608-40B,118 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
User Guide
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