

INFINEON BCP5316H6327XTSA1
Manufacturer No:
BCP5316H6327XTSA1
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
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BCP5316H6327XTSA1 information
INFINEON BCP5316H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BCP5316H6327XTSA1.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- BCP53
- JESD-30 Code
- R-PDSO-G4
- Number of Elements
- 1
- Configuration
- SINGLE
- Case Connection
- COLLECTOR
- Power - Max
- 2W
- Transistor Application
- AMPLIFIER
- Polarity/Channel Type
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 150mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 80V
- Current - Collector (Ic) (Max)
- 1A
- Transition Frequency
- 125MHz
- Frequency - Transition
- 125MHz
- Power Dissipation-Max (Abs)
- 2W
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for INFINEON BCP5316H6327XTSA1.
Other Related Documents:
PCN Obsolescence/ EOL:
PCN Packaging:
BCP5316H6327XTSA1 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 125MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
BCP5316H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz
BCP5316H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCP5316H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Step4:Individual Package

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Step6:Packaging Box
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