ONSEMI BC558BZL1G

Manufacturer No:

BC558BZL1G

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

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BC558BZL1G information

ONSEMI BC558BZL1G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI BC558BZL1G.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount
NO

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Box (TB)

Published
2007

JESD-609 Code
e1

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature
EUROPEAN PART NUMBER

Subcategory
Other Transistors

Voltage - Rated DC
-30V

Max Power Dissipation
625mW

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
260

Reach Compliance Code
unknown

Current Rating
-100mA

Frequency
360MHz

Time@Peak Reflow Temperature-Max (s)
40

Pin Count
3

Qualification Status
Not Qualified

Number of Elements
1

Element Configuration
Single

Power Dissipation
625mW

Transistor Application
AMPLIFIER

Gain Bandwidth Product
360MHz

Polarity/Channel Type
PNP

Transistor Type
PNP

Collector Emitter Voltage (VCEO)
650mV

Max Collector Current
100mA

DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 5V

Current - Collector Cutoff (Max)
100nA

Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA

Collector Emitter Breakdown Voltage
30V

Transition Frequency
360MHz

Collector Emitter Saturation Voltage
-300mV

Collector Base Voltage (VCBO)
-30V

Emitter Base Voltage (VEBO)
5V

hFE Min
180

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for ONSEMI BC558BZL1G.

BC558BZL1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 100mA volts.

BC558BZL1G Features

the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 360MHz

BC558BZL1G Applications

There are a lot of ON Semiconductor
BC558BZL1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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