APT20M22JVRU2-Microchip-Price, Stock & Datasheet

APT20M22JVRU2 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8500pF @ 25V.This device conducts a continuous drain current (ID) of 97A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 388A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APT20M22JVRU2 Features

the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 97A
the turn-off delay time is 48 ns
based on its rated peak drain current 388A.
a 200V drain to source voltage (Vdss)