AOS AOB4S60L

Manufacturer No:

AOB4S60L

Manufacturer:

AOS

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 900m ? @ 2A, 10V ±30V 263pF @ 100V 6nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

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In Stock :Available

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AOB4S60L information

AOS AOB4S60L technical specifications, attributes, parameters and parts with similar specifications to AOS AOB4S60L.

Type
Parameter

Factory Lead Time
18 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
aMOS?

Published
2011

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
4

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
83W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
900m ? @ 2A, 10V

Vgs(th) (Max) @ Id
4.1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
263pF @ 100V

Current - Continuous Drain (Id) @ 25°C
4A Tc

Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V

Drain to Source Voltage (Vdss)
600V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Continuous Drain Current (ID)
4A

Gate to Source Voltage (Vgs)
30V

Drain Current-Max (Abs) (ID)
4A

Drain-source On Resistance-Max
0.9Ohm

DS Breakdown Voltage-Min
600V

Avalanche Energy Rating (Eas)
77 mJ

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for AOS AOB4S60L.

AOB4S60L Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 77 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 263pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

AOB4S60L Features

the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 4A
a 600V drain to source voltage (Vdss)

AOB4S60L Applications

There are a lot of Alpha & Omega Semiconductor Inc.
AOB4S60L applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

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Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.