AOS AOI11S60

Manufacturer No:

AOI11S60

Manufacturer:

AOS

Package:

TO-251-3 Stub Leads, IPak

Description:

MOSFET (Metal Oxide) N-Channel Tube 399m ? @ 3.8A, 10V ±30V 545pF @ 100V 11nC @ 10V 600V TO-251-3 Stub Leads, IPak

Quantity:

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AOI11S60 information

AOS AOI11S60 technical specifications, attributes, parameters and parts with similar specifications to AOS AOI11S60.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-251-3 Stub Leads, IPak

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
aMOS?

Published
2011

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Pin Count
3

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
208W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
208W

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
399m ? @ 3.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds
545pF @ 100V

Current - Continuous Drain (Id) @ 25°C
11A Tc

Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V

Drain to Source Voltage (Vdss)
600V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Continuous Drain Current (ID)
11A

Gate to Source Voltage (Vgs)
30V

Pulsed Drain Current-Max (IDM)
45A

DS Breakdown Voltage-Min
600V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for AOS AOI11S60.

Datasheets:

alphaomegasemiconductor-aoi11s60-datasheets-8030.pdf

AOI11S60 Overview

The maximum input capacitance of this device is 545pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.There is no pulsed drain current maximum for this device based on its rated peak drain current 45A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

AOI11S60 Features

a continuous drain current (ID) of 11A
based on its rated peak drain current 45A.
a 600V drain to source voltage (Vdss)

AOI11S60 Applications

There are a lot of Alpha & Omega Semiconductor Inc.
AOI11S60 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

User Guide

PURCHASE

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IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.