Comchip Technology AMMBT2222A-HF

Manufacturer No:

AMMBT2222A-HF

Manufacturer:

Comchip Technology

Package:

TO-236-3, SC-59, SOT-23-3

Description:

NPN -55°C ~ 150°C (TJ) 10nA TO-236-3, SC-59, SOT-23-3 Surface Mount

Quantity:

In Stock :3509

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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AMMBT2222A-HF Information

Comchip Technology AMMBT2222A-HF technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology AMMBT2222A-HF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Supplier Device Package
SOT-23-3

Mfr
Comchip Technology

Product Status
Active

Operating Temperature
-55°C ~ 150°C (TJ)

Power - Max
300 mW

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V

Current - Collector Cutoff (Max)
10nA

Type
Parameter

Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max)
40 V

Current - Collector (Ic) (Max)
600 mA

Frequency - Transition
300MHz

Download datasheets and manufacturer documentation for Comchip Technology AMMBT2222A-HF.

AMMBT2222A-HF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.SOT-23-3 is the supplier device package for this product.This device displays a 40 V maximum voltage - Collector Emitter Breakdown.