Renesas 2SK4150TZ-E
Renesas 2SK4150TZ-E

Renesas 2SK4150TZ-E

Manufacturer No:

2SK4150TZ-E

Manufacturer:

Renesas

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.7 ? @ 200mA, 4V ±10V 80pF @ 25V 3.7nC @ 4V 250V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2SK4150TZ-E information

Renesas 2SK4150TZ-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK4150TZ-E.

  • Type
  • Parameter
  • Factory Lead Time
  • 16 Weeks
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2010
  • Pbfree Code
  • yes
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • HTS Code
  • 8541.21.00.95
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • BOTTOM
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • Pin Count
  • 3
  • Qualification Status
  • Not Qualified
  • Number of Elements
  • 1
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • Operating Mode
  • ENHANCEMENT MODE
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 5.7 ? @ 200mA, 4V
  • Input Capacitance (Ciss) (Max) @ Vds
  • 80pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
  • 400mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
  • 3.7nC @ 4V
  • Drain to Source Voltage (Vdss)
  • 250V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 2.5V 4V
  • Vgs (Max)
  • ±10V
  • Continuous Drain Current (ID)
  • 400mA
  • Drain Current-Max (Abs) (ID)
  • 0.4A
  • Drain-source On Resistance-Max
  • 5.9Ohm
  • DS Breakdown Voltage-Min
  • 250V
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Renesas 2SK4150TZ-E.

Datasheets:

ConflictMineralStatement:

2SK4150TZ-E Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 80pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 400mA continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 0.4A.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.

2SK4150TZ-E Features


a continuous drain current (ID) of 400mA
a 250V drain to source voltage (Vdss)


2SK4150TZ-E Applications


There are a lot of Renesas Electronics America
2SK4150TZ-E applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

User Guide

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

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Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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