ROHM 2SAR522EBTL
Manufacturer No:
2SAR522EBTL
Manufacturer:
ROHM
Package:
SC-89, SOT-490
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-89, SOT-490 Tape & Reel (TR) Surface Mount
Quantity:
In Stock :9998
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SAR522EBTL Information
ROHM 2SAR522EBTL technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SAR522EBTL.
- Type
- Parameter
- Factory Lead Time
- 13 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-89, SOT-490
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Max Power Dissipation
- 150mW
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for ROHM 2SAR522EBTL.
2SAR522EBTL Overview
DC current gain in this device equals 120 @ 1mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -120mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 200mA volts.
2SAR522EBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522EBTL Applications
There are a lot of ROHM Semiconductor
2SAR522EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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