ROHM 2SCR372P5T100Q

Manufacturer No:

2SCR372P5T100Q

Manufacturer:

ROHM

Package:

SC-62, 3 PIN

Description:

Small Signal Bipolar Transistor, 0.7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3 PIN

Quantity:

In Stock :3726

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SCR372P5T100Q Information

ROHM 2SCR372P5T100Q technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SCR372P5T100Q.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Active

Ihs Manufacturer
ROHM CO LTD

Package Description
SC-62, 3 PIN

Reach Compliance Code
not_compliant

ECCN Code
EAR99

Date Of Intro
2016-04-06

Samacsys Manufacturer
ROHM Semiconductor

Case Connection
COLLECTOR

Collector Current-Max (IC)
0.7 A

Type
Parameter

Collector-Emitter Voltage-Max
120 V

Configuration
SINGLE

DC Current Gain-Min (hFE)
120

JESD-30 Code
R-PSSO-F3

JESD-609 Code
e3

Moisture Sensitivity Level
1

Number of Elements
1

Number of Terminals
3

Operating Temperature-Max
150 °C

Package Body Material
PLASTIC/EPOXY

Download datasheets and manufacturer documentation for ROHM 2SCR372P5T100Q.

Datasheets:

ROHM-S-A0004439228-1.pdf

2SCR372P5T100Q Overview

In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.