ONSEMI 2SA1381CSTU
Manufacturer No:
2SA1381CSTU
Manufacturer:
ONSEMI
Package:
TO-225AA, TO-126-3
Description:
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
Quantity:



In Stock :9830
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2SA1381CSTU Information
ONSEMI 2SA1381CSTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2SA1381CSTU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Weight
- 761mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Type
- Parameter
- Max Power Dissipation
- 7W
- Frequency
- 150MHz
- Base Part Number
- 2SA1381
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 7W
- Transistor Application
- AMPLIFIER
- Gain Bandwidth Product
- 150MHz
- Polarity/Channel Type
- PNP
Download datasheets and manufacturer documentation for ONSEMI 2SA1381CSTU.
Datasheets:
ReachStatement:
2SA1381CSTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
2SA1381CSTU Features
the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
2SA1381CSTU Applications
There are a lot of ON Semiconductor
2SA1381CSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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