ONSEMI 2N6519BU
Manufacturer No:
2N6519BU
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Quantity:
In Stock :1851
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2N6519BU Information
ONSEMI 2N6519BU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N6519BU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins
- 3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Voltage - Rated DC
- -300V
- Max Power Dissipation
- 625mW
- Type
- Parameter
- Current Rating
- -500mA
- Frequency
- 200MHz
- Base Part Number
- 2N6519
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 625W
- Power - Max
- 625mW
- Gain Bandwidth Product
- 200MHz
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 300V
Download datasheets and manufacturer documentation for ONSEMI 2N6519BU.
Datasheets:
ReachStatement:
2N6519BU Overview
This device has a DC current gain of 40 @ 50mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.The maximum collector current is 500mA volts.
2N6519BU Features
the DC current gain for this device is 40 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
2N6519BU Applications
There are a lot of ON Semiconductor
2N6519BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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