Microchip 2N6306T1

Manufacturer No:

2N6306T1

Manufacturer:

Microchip

Package:

TO-204AA, TO-3

Description:

NPN -65°C ~ 200°C 50?A TO-204AA, TO-3 Through Hole

Quantity:

In Stock :5590

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2N6306T1 Information

Microchip 2N6306T1 technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N6306T1.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-204AA, TO-3

Supplier Device Package
TO-204AD (TO-3)

Mfr
Microchip Technology

Package
Bulk

Product Status
Active

Operating Temperature
-65°C ~ 200°C

Power - Max
125 W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A, 5V

Type
Parameter

Current - Collector Cutoff (Max)
50?A

Vce Saturation (Max) @ Ib, Ic
5V @ 2A, 8A

Voltage - Collector Emitter Breakdown (Max)
250 V

Current - Collector (Ic) (Max)
8 A

Download datasheets and manufacturer documentation for Microchip 2N6306T1.

2N6306T1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A, 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 2A, 8A.This product comes in a TO-204AD (TO-3) device package from the supplier.Device displays Collector Emitter Breakdown (250 V maximal voltage).