Microchip 2N6193QFN/TR
Manufacturer No:
2N6193QFN/TR
Manufacturer:
Microchip
Package:
TO-205AD, TO-39-3 Metal Can
Description:
PNP -65°C ~ 200°C 100?A TO-205AD, TO-39-3 Metal Can Through Hole
Quantity:
In Stock :5133
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2N6193QFN/TR Information
Microchip 2N6193QFN/TR technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N6193QFN/TR.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Supplier Device Package
- TO-39 (TO-205AD)
- Mfr
- Microchip Technology
- Package
- Tape & Reel (TR)
- Product Status
- Active
- Operating Temperature
- -65°C ~ 200°C
- Power - Max
- 1 W
- Transistor Type
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 2A, 2V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 100?A
- Vce Saturation (Max) @ Ib, Ic
- 1.2V @ 500mA, 5A
- Voltage - Collector Emitter Breakdown (Max)
- 100 V
- Current - Collector (Ic) (Max)
- 5 A
Download datasheets and manufacturer documentation for Microchip 2N6193QFN/TR.
2N6193QFN/TR Overview
DC current gain in this device equals 60 @ 2A, 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 500mA, 5A.Product comes in TO-39 (TO-205AD) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N6193QFN/TR Features
the DC current gain for this device is 60 @ 2A, 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the supplier device package of TO-39 (TO-205AD)
2N6193QFN/TR Applications
There are a lot of Microchip Technology
2N6193QFN/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
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