ONSEMI 2N5550RLRP
ONSEMI 2N5550RLRP

ONSEMI 2N5550RLRP

Manufacturer No:

2N5550RLRP

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2N5550RLRP information

ONSEMI 2N5550RLRP technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5550RLRP.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Box (TB)
  • Published
  • 1996
  • JESD-609 Code
  • e0
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin/Lead (Sn/Pb)
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • 140V
  • Max Power Dissipation
  • 625mW
  • Terminal Position
  • BOTTOM
  • Peak Reflow Temperature (Cel)
  • 240
  • Reach Compliance Code
  • not_compliant
  • Current Rating
  • 600mA
  • Frequency
  • 300MHz
  • Time@Peak Reflow Temperature-Max (s)
  • 30
  • Base Part Number
  • 2N5550
  • Qualification Status
  • Not Qualified
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power Dissipation
  • 625mW
  • Transistor Application
  • AMPLIFIER
  • Gain Bandwidth Product
  • 300MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 140V
  • Max Collector Current
  • 600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 60 @ 10mA 5V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 250mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
  • 140V
  • Transition Frequency
  • 100MHz
  • Collector Emitter Saturation Voltage
  • 250mV
  • Collector Base Voltage (VCBO)
  • 160V
  • Emitter Base Voltage (VEBO)
  • 6V
  • hFE Min
  • 60
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Contains Lead

Download datasheets and manufacturer documentation for ONSEMI 2N5550RLRP.

Datasheets:

PCN Obsolescence/ EOL:

ReachStatement:

2N5550RLRP Overview


The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.

2N5550RLRP Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz


2N5550RLRP Applications


There are a lot of ON Semiconductor
2N5550RLRP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

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DELIVERY TIME

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2. For in-stock parts, orders normally could be shipped out within 1-2days.

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