

ONSEMI 2N3904_J18Z
Manufacturer No:
2N3904_J18Z
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
NPN -55°C~150°C TJ TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Quantity:
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2N3904_J18Z information
ONSEMI 2N3904_J18Z technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N3904_J18Z.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package
- TO-92-3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- 2N3904
- Power - Max
- 625mW
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)
- 40V
- Current - Collector (Ic) (Max)
- 200mA
- Frequency - Transition
- 300MHz
Download datasheets and manufacturer documentation for ONSEMI 2N3904_J18Z.
Datasheets:
2N3904_J18Z Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.Product comes in the supplier's device package TO-92-3.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
2N3904_J18Z Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N3904_J18Z Applications
There are a lot of ON Semiconductor
2N3904_J18Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Step4:Individual Package

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