

DIODES 2DB1132R-13
Manufacturer No:
2DB1132R-13
Manufacturer:
Package:
TO-243AA
Description:
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
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2DB1132R-13 information
DIODES 2DB1132R-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES 2DB1132R-13.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- DIODES INC
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 8 Weeks
- Samacsys Manufacturer
- Diodes Incorporated
- Case Connection
- COLLECTOR
- Collector Current-Max (IC)
- 1 A
- Collector-Emitter Voltage-Max
- 32 V
- Configuration
- SINGLE
- DC Current Gain-Min (hFE)
- 180
- JESD-30 Code
- R-PSSO-F3
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Temperature-Max
- 150 °C
- Package Body Material
- PLASTIC/EPOXY
- Package Shape
- RECTANGULAR
- Package Style
- SMALL OUTLINE
- Peak Reflow Temperature (Cel)
- 260
- Power Dissipation-Max (Abs)
- 1 W
- Qualification Status
- Not Qualified
- Surface Mount
- YES
- Terminal Finish
- MATTE TIN
- Terminal Form
- FLAT
- Terminal Position
- SINGLE
- Time@Peak Reflow Temperature-Max (s)
- 30
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Transition Frequency-Nom (fT)
- 190 MHz
Download datasheets and manufacturer documentation for DIODES 2DB1132R-13.
Datasheets:
2DB1132R-13 Overview
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -125mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 190MHz.As a result, it can handle voltages as low as 32V volts.The maximum collector current is 1A volts.
2DB1132R-13 Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -125mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz
2DB1132R-13 Applications
There are a lot of Diodes Incorporated
2DB1132R-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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