DIODES 2DB1132P-13

Manufacturer No:

2DB1132P-13

Manufacturer:

DIODES

Package:

TO-243AA

Description:

PNP -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

Quantity:

In Stock :6231

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Shipped from：HK Warehouse

Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2DB1132P-13 Information

DIODES 2DB1132P-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES 2DB1132P-13.

Type
Parameter

Factory Lead Time
7 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-243AA

Number of Pins
4

Weight
51.993025mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2011

Type
Parameter

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Subcategory
Other Transistors

Max Power Dissipation
1W

Terminal Form
FLAT

Download datasheets and manufacturer documentation for DIODES 2DB1132P-13.

2DB1132P-13 Overview

The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 82 @ 100mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 190MHz is present in the part.There is a breakdown input voltage of 32V volts that it can take.Collector current can be as low as 1A volts at its maximum.

2DB1132P-13 Features

the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz