STP60N3LH5 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1350pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 22VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

STP60N3LH5 Features

a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns

STP60N3LH5 Applications

There are a lot of STMicroelectronics
STP60N3LH5 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	STP60N3LH5	ST	MOSFET (Metal Oxide) N-Channel Tube 8.4m ? @ 24A, 10V ±20V 1350pF @ 25V 8.8nC @ 5V TO-220-3	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	STP60N3LH5-VB	VBsemi Elec		-	In Stock	Check Price	MOQ:1	Get a Quote

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