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MMBT5550LT1 Overview

As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 600mA volts.

MMBT5550LT1 Features

a collector emitter saturation voltage of 150mV
the emitter base voltage is kept at 6V
the current rating of this device is 600mA

MMBT5550LT1 Applications

There are a lot of ON Semiconductor
MMBT5550LT1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

23:T4c0,

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

MMBT5550LT1 Overview

MMBT5550LT1 Features

MMBT5550LT1 Applications

Application

End Product

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	MMBT5550LT1	ONSEMI	SOT-23-3 Cut Tape (CT)	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	MMBT5550LT1G	ONSEMI	High Voltage NPN Bipolar Transistor	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote

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