IPP60R125CPXKSA1 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 708 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 100V.This device has a continuous drain current (ID) of [25A], which is its maximum continuous current.A maximum pulsed drain current of 82A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).

IPP60R125CPXKSA1 Features

the avalanche energy rating (Eas) is 708 mJ
a continuous drain current (ID) of 25A
based on its rated peak drain current 82A.
a 650V drain to source voltage (Vdss)

IPP60R125CPXKSA1 Applications

There are a lot of Infineon Technologies
IPP60R125CPXKSA1 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	IPP60R125CP	INFINEON		-	In Stock	Check Price	MOQ:1	Get a Quote
	IPP60R125CPXKSA1	INFINEON	N-Channel Tube 125m Ω @ 16A, 10V ±20V 2500pF @ 100V 70nC @ 10V 650V TO-220-3	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote

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