958d95cedc896aa1.js","7730","static/chunks/7730-8c95456422306e8d.js","8519","static/chunks/8519-b12a53db86804dab.js","8863","static/chunks/8863-6635c44980d4179c.js","6135","static/chunks/app/search/%5Bkeyword%5D/page-4a0f4cdd355980e8.js"],"default"] 22:T4bd,

FF200R12KE3B2HOSA1 Description

FF200R12KE3B2HOSA1 is a 1200v IGBT-modules. The FF200R12KE3B2HOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Enterprise systems, Enterprise projectors, Personal electronics, and Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125?. And the transistor FF200R12KE3B2HOSA1 is in the tray package with 1050W Power dissipation.

FF200R12KE3B2HOSA1 Features

Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 295A

Repetitive peak collector current Tp = 1 ms: 400A

Total power dissipation Tc = 25°C: 1050W

Gate-emitter peak voltage: ±20V

FF200R12KE3B2HOSA1 Applications

Automotive

Hybrid, electric & powertrain systems

Enterprise systems

Enterprise projectors

Personal electronics

Home theater & entertainment

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	FF200R12KE3B2	Infineon	1.05kW 295A 1.2kV Single IGBTs RoHS	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	FF200R12KE3B2HOSA1	INFINEON		-	In Stock	Check Price	MOQ:1	Get a Quote

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