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These dual N & P Channel logic level enhancement mode field effec transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.

Application

This product is general usage and suitable for many different applications.

Feature

N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V.
P-Ch 25 V, -0.12 A, RDS(ON) = 13 Ω @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits. V_GS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
Replace NPN & PNP digital transistors.

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	FDC6320C	ONSEMI	Dual N & P Channel Digital FET 25V	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	FDC6320C-NL-VB	VBsemi	20V 1.15W 800mV@250uA TSOP-6 Single FETs, MOSFETs RoHS	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote

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