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These Dual P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.

Application

This product is general usage and suitable for many different applications.

Feature

-25 V, -0.12 A continuous, -0.5 A Peak
R_DS(ON) = 13 Ω @ V_GS= -2.7 V
R_DS(ON) = 10 Ω @ V_GS = -4.5 V
Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.5V
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	FDC6302P	ONSEMI	Dual P-Channel Digital FET -25V, -0.12A, 10Ω	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	FDC6302P-VB	VBsemi	TSOP-6 Single FETs, MOSFETs RoHS	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote

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