BSZ0905PNSATMA1 Description

The combination of cutting-edge power supply technology BSZ0905PNSATMA1 for high-voltage and low-voltage applications with a full range of packaging and innovative chip bonding technologies reflects STMicros' innovation in power transistors that belong to the STPOWER family. STMicro electronics offers power MOSFET from-100V to 1700V, IGBT with breakdown voltage from 300V to 1700V, and power bipolar transistor (from 15 to 1700V). Thanks to the improved thermal design of ST's power electronics systems, our silicon carbide MOSFET (SIC) ensures good robustness, thanks to the industry's maximum rated temperature of 200C and a voltage range of 650V to 2200 V. In addition, our Silicon substrate (GaN/Si) gan transistors have excellent dynamic on-resistance and small capacitors (100V, 650V and 900V) to achieve the highest efficiency and power density.

BSZ0905PNSATMA1 Features

?singleP-ChannelinS3O8

?Optimized for Charger applications

?150°Cope rating temperature

?VGS=25V,specially suited for notebook applications

?Pb-free;RoHS compliant

?applications:battery management,load switching

?Halogen-freeaccordingtoIEC61249-2-21

BSZ0905PNSATMA1 Applications

Qualified according to JEDEC Standard

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	BSZ0905PNS	Infineon	30V 40A 69W 2.5V@105uA TSDSON-8FL Single FETs, MOSFETs ROHS	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	BSZ0905PNSATMA1	INFINEON		-	In Stock	Check Price	MOQ:1	Get a Quote

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