2N7002BKMB,315 Overview

A device's maximum input capacitance is 50pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 450mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 0.45A, and it is the maximum continuous current the device can conduct.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 60V, it supports maximum dual supply voltages.

2N7002BKMB,315 Features

a continuous drain current (ID) of 450mA
a drain-to-source breakdown voltage of 60V voltage

2N7002BKMB,315 Applications

There are a lot of Nexperia USA Inc.
2N7002BKMB,315 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	2N7002BKMB	NXP		-	In Stock	Check Price	MOQ:1	Get a Quote
	2N7002BKMB,315	NEXPERIA	N-Channel Tape & Reel (TR) 1.6 Ω @ 450mA, 10V ±20V 50pF @ 10V 0.6nC @ 4.5V 3-XFDFN	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote

ALL Results for "2N7002BKMB"