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The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

Feature

Extremely Low v_F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction

Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number
Polarity: Cathode indicated by Polarity Band
Marking: 1N5820, 1N5821, 1N5822
Pb-Free Packages are Available

23:T55c,

Images	Part Number	Mfr	Description	Datasheet	Availability	Price	Qty	RFQ	Rohs
	1N5820RL	ONSEMI	Schottky Barrier Rectifier, 3.0 A, 20 V	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote
	1N5820RLG	ONSEMI	Schottky Barrier Rectifier, 3.0 A, 20 V	Datasheet	In Stock	Check Price	MOQ:1	Get a Quote

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