DIODES ZXTN25100DGTA

Manufacturer No:

ZXTN25100DGTA

Manufacturer:

DIODES

Package:

TO-261-4, TO-261AA

Description:

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Quantity:

In Stock :1367

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

ZXTN25100DGTA Information

DIODES ZXTN25100DGTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXTN25100DGTA.

Type
Parameter

Factory Lead Time
15 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-261-4, TO-261AA

Number of Pins
4

Weight
7.994566mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2007

Type
Parameter

JESD-609 Code
e3

Pbfree Code
no

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Subcategory
Other Transistors

Max Power Dissipation
5.3W

Terminal Position
DUAL

Download datasheets and manufacturer documentation for DIODES ZXTN25100DGTA.

ZXTN25100DGTA Overview

DC current gain in this device equals 300 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 175MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 3A volts.

ZXTN25100DGTA Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 600mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz