

Diodes ZXTN19060CGTA
Manufacturer No:
ZXTN19060CGTA
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
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ZXTN19060CGTA information
Diodes ZXTN19060CGTA technical specifications, attributes, parameters and parts with similar specifications to Diodes ZXTN19060CGTA.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Weight
- 250.212891mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e3
- Pbfree Code
- no
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- Other Transistors
- Max Power Dissipation
- 5.3W
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 130MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Pin Count
- 4
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 5.3W
- Case Connection
- COLLECTOR
- Power - Max
- 3W
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 130MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 60V
- Max Collector Current
- 7A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 100mA 2V
- Current - Collector Cutoff (Max)
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 700mA, 7A
- Collector Emitter Breakdown Voltage
- 60V
- Transition Frequency
- 130MHz
- Collector Emitter Saturation Voltage
- 50mV
- Max Breakdown Voltage
- 60V
- Collector Base Voltage (VCBO)
- 160V
- Emitter Base Voltage (VEBO)
- 7V
- Continuous Collector Current
- 7A
- Height
- 1.65mm
Download datasheets and manufacturer documentation for Diodes ZXTN19060CGTA.
Environmental Information:
PCN Assembly/Origin:
ZXTN19060CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 50mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 7A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 7A volts.
ZXTN19060CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 300mV @ 700mA, 7A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
ZXTN19060CGTA Applications
There are a lot of Diodes Incorporated
ZXTN19060CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ZXTN19060CGTA Relevant information
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