DIODES ZXMN3B04N8TC
Manufacturer No:
ZXMN3B04N8TC
Manufacturer:
DIODES
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25m ? @ 7.2A, 4.5V ±12V 2480pF @ 15V 23.1nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :8586
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
ZXMN3B04N8TC Information
DIODES ZXMN3B04N8TC technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXMN3B04N8TC.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Weight
- 73.992255mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for DIODES ZXMN3B04N8TC.
ZXMN3B04N8TC Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2480pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.2A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
ZXMN3B04N8TC Features
a continuous drain current (ID) of 7.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 45A.
ZXMN3B04N8TC Applications
There are a lot of Diodes Incorporated
ZXMN3B04N8TC applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
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