DIODES ZXMN10B08E6TC
Manufacturer No:
ZXMN10B08E6TC
Manufacturer:
DIODES
Package:
SOT-23-6
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 230m ? @ 1.6A, 10V ±20V 497pF @ 50V 9.2nC @ 10V SOT-23-6
Quantity:
In Stock :1999
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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ZXMN10B08E6TC Information
DIODES ZXMN10B08E6TC technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXMN10B08E6TC.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2012
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- LOW THRESHOLD
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- 1.9A
Download datasheets and manufacturer documentation for DIODES ZXMN10B08E6TC.
ZXMN10B08E6TC Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 497pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 12.1 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.3V 10V), this device helps reduce its overall power consumption.
ZXMN10B08E6TC Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 12.1 ns
based on its rated peak drain current 9A.
ZXMN10B08E6TC Applications
There are a lot of Diodes Incorporated
ZXMN10B08E6TC applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
