DIODES ZVN2120GTA
Manufacturer No:
ZVN2120GTA
Manufacturer:
DIODES
Package:
SMALL OUTLINE, R-PDSO-G4
Description:
Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Quantity:
In Stock :4234
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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ZVN2120GTA Information
DIODES ZVN2120GTA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZVN2120GTA.
- Type
- Parameter
- Pbfree Code
- No
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- DIODES INC
- Part Package Code
- SOT-223
- Package Description
- SMALL OUTLINE, R-PDSO-G4
- Pin Count
- 4
- Reach Compliance Code
- not_compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 8 Weeks
- Type
- Parameter
- Samacsys Manufacturer
- Diodes Incorporated
- Case Connection
- DRAIN
- Configuration
- SINGLE
- DS Breakdown Voltage-Min
- 200 V
- Drain Current-Max (ID)
- 0.32 A
- Drain-source On Resistance-Max
- 10 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-PDSO-G4
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
Download datasheets and manufacturer documentation for DIODES ZVN2120GTA.
Environmental Information:
ZVN2120GTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 85pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 320mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.32A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
ZVN2120GTA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a threshold voltage of 1V
ZVN2120GTA Applications
There are a lot of Diodes Incorporated
ZVN2120GTA applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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