XLMG3100R017VBER-Texas Instruments-Price, Stock & Datasheet

The LMG3100 device is a 100V continuous, 120V pulsed Gallium Nitride (GaN) FET with integrated driver. Device is offered in two Rds(on) and max current variants, 126A/1.7mΩ for LMG3100R017 and 46A/4.4mΩ for LMG3100R044. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without an additional level shifter.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.